Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer

被引：18

作者：

Xiao, Bo ^{[1
]}

Liu, Hongrui ^{[1
]}

Avrutin, Vitaliy ^{[1
]}

Leach, Jacob H. ^{[1
]}

Rowe, Emmanuel ^{[1
]}

Liu, Huiyong ^{[1
]}

Ozgur, Umit ^{[1
]}

Morkoc, Hadis ^{[1
]}

Chang, W. ^{[2
]}

Alldredge, L. M. B. ^{[2
]}

Kirchoefer, S. W. ^{[2
]}

Pond, J. M. ^{[2
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 21期

关键词：

barium compounds; epitaxial growth; magnesium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; sputter deposition; strontium compounds; thin films; X-ray diffraction; zinc compounds; MOLECULAR-BEAM EPITAXY;

D O I：

10.1063/1.3266862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire (1120) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30 degrees, which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [1120] and BST [110]/MgO [110]//ZnO [1100]. Capacitance-voltage measurements performed on BST coplanar interdigitated capacitor structures revealed a high dielectric tunability of up to 84% at 1 MHz.

引用

页数：3

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