Temperature dependence of pulse duration in a mode-locked quantum-dot laser

被引:15
作者
Cataluna, M. A.
Viktorov, E. A.
Mandel, Paul
Sibbett, W.
Livshits, D. A.
Weimert, J.
Kovsh, A. R.
Rafailov, E. U.
机构
[1] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland
[2] Univ Libre Bruxelles, Opt Nonlineaire Theor, B-1050 Brussels, Belgium
[3] NL Nanosemicond GmbH, D-44263 Dortmund, Germany
[4] Univ Dundee, Carnegie Lab Phys, Div Elect Engn & Phys, Dundee DD1 4HN, Scotland
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1063/1.2711291
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors demonstrate, experimentally and theoretically, that in a mode-locked two-section quantum-dot laser, the pulse duration decreases with temperature. The primary cause is the increase of carrier capture/escape rates with temperature that leads to faster absorption recovery. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 15 条
[1]  
Bimberg D., 1999, QUANTUM DOT HETEROST
[2]   Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers [J].
Borri, P ;
Langbein, W ;
Hvam, JM ;
Heinrichsdorff, F ;
Mao, MH ;
Bimberg, D .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) :544-551
[3]   Stable mode-locked operation up to 80 °C from an InGaAs quantum-dot laser [J].
Cataluna, M. A. ;
Rafailov, E. U. ;
McRobbie, A. D. ;
Sibbett, W. ;
Livshits, D. A. ;
Kovsh, A. R. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (13-16) :1500-1502
[4]   Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission [J].
Feldmann, J ;
Cundiff, ST ;
Arzberger, M ;
Böhm, G ;
Abstreiter, G .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1180-1183
[5]   Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser [J].
Huang, H ;
Deppe, DG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (05) :691-698
[6]   Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output [J].
Jiang, H ;
Singh, J .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7438-7442
[7]   Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs [J].
Kovsh, AR ;
Ledentsov, NN ;
Mikhrin, SS ;
Zhukov, AE ;
Livshits, DA ;
Maleev, NA ;
Maximov, MV ;
Ustinov, VM ;
Gubenko, AE ;
Gadjiev, IM ;
Portnoi, EL ;
Wang, JS ;
Chi, J ;
Ouyang, D ;
Bimberg, D ;
Lott, JA .
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XII, 2004, 5349 :31-45
[8]   Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm [J].
Malins, D. B. ;
Gomez-Iglesias, A. ;
White, S. J. ;
Sibbett, W. ;
Miller, A. ;
Rafailov, E. U. .
APPLIED PHYSICS LETTERS, 2006, 89 (17)
[9]   Modeling carrier dynamics in quantum-dot lasers [J].
Markus, A ;
Fiore, A .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (02) :338-344
[10]   Thermal effects in quantum dot lasers [J].
Patanè, A ;
Polimeni, A ;
Henini, M ;
Eaves, L ;
Main, PC ;
Hill, G .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :625-627