Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

被引：7

作者：

Zhu, Zhen ^{[1
,2
]}

Merdes, Saoussen ^{[1
]}

Ylivaara, Oili M. E. ^{[3
]}

Mizohata, Kenichiro ^{[4
]}

Heikkila, Mikko J. ^{[5
]}

Savin, Hele ^{[2
]}

机构：

[1] Beneq Oy, Olarinluoma 9, Espoo 02200, Finland

[2] Aalto Univ, Dept Elect & Nanoengn, Tietotie 3, Espoo 02150, Finland

[3] VTT Tech Res Ctr Finland Ltd, POB 1000, Espoo 02044, Finland

[4] Univ Helsinki, Phys Dept, Gustaf Hallstromin Katu 2, Helsinki 00560, Finland

[5] Univ Helsinki, Dept Chem, AI Virtasen Aukio 1, Helsinki 00560, Finland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 08期

关键词：

Al2O3; atomic layer deposition; plasma; radicals; water vapor transmission rate; ASSISTED ALD; WATER;

D O I：

10.1002/pssa.201900237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N-2 plasma treatment process at 90 degrees C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (approximate to 3.8 at% for hydrogen, approximate to 0.17 at% for carbon, and approximate to 0.51 at% for nitrogen), a high mass density (approximate to 3.1 g cm(-3)), and a low tensile residual stress (approximate to 160 MPa). A water vapor transmission rate of 2.9 x 10(-3) g m(-2) day(-1) is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.

引用

页数：5

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