Growth, Magnetic and Electrical Transport Properties of La0.7Sr0.3MnO3 Thin Films on PLZST Ceramics

被引:1
作者
Xiao Ling [1 ]
Chen Ying [1 ]
Liu Zhen [1 ]
Wang Gen-Shui [1 ]
Wen Zhi-Yu [2 ]
Dong Xian-Lin [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
[2] Chongqing Univ, Microsyst Ctr, Chongqing 400030, Peoples R China
基金
上海市自然科学基金; 中国国家自然科学基金;
关键词
La0.7Sr0.3MnO3 thin films; PLZST ceramics; magnetoresistance; diffusion; TEMPERATURE; MANGANESE; DISORDER;
D O I
10.15541/jim20160332
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
La0.7Sr0.3MnO3 (LSMO) thin films with different thicknesses were deposited on (Pb0.97La0.02) (Zr0.58Sn0.3025Ti0.1175)O-3 (PLZST) ceramics by RF magnetron sputtering, and their microstructure, magnetic and electrical transport properties were investigated. Microscopy observations show that LSMO thin films are perovskite structure without obvious impurity phase. All the LSMO thin films display smooth surface with uniform, and roughness is as low as 2.93 nm for LSMO thin films at the thickness of 20 nm. Furthermore, large magnetoresistance (MR) effect was observed in LSMO thin films in a broad temperature range of 10-300 K. Particularly the MR of LSMO thin films with 20 nm in thickness exhibits excellent temperature stability. Moreover, the Curie temperature, metal-insulator transition temperature, saturation magnetization and electrical conductivity decrease as the film thickness increases, which is attributed to the diffusion of Pb, Sn, Zr, etc. in the samples, resulting in the distortion of MnO6 octahedron.
引用
收藏
页码:326 / 330
页数:5
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