Comparison of the sensitivity to heavy ions of 0.25-μm bulk and SOI technologies

被引：23

作者：

Gasiot, G ^{[1
]}

Ferlet-Cavrois, V

Roche, P

Flatresse, P

D'Hose, C

Musseau, O

de Poncharra, JD

机构：

[1] STMicroelect, F-38926 Crolles, France

[2] CEA, DAM Ile France, F-91680 Bruyeres Le Chatel, France

[3] CEA, LETI, DRT, F-38054 Grenoble, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 03期

关键词：

circuit and device simulations; heavy ion irradiation; silicon on insulator (SOI) and bulk technology; single event upset (SEU) sensitivity;

D O I：

10.1109/TNS.2002.1039682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sensitivity to heavy ions of nonhardened 0.25-mum partially depleted (PD) silicon on insulator (SOI) and bulk technologies is studied with experiments, device, and circuit simulations. Comparable threshold linear energy transfer (LET) are found for both technologies. Nevertheless, SOI saturated cross section is much lower than bulk one. For nonhardened technologies, SOI is then less sensitive than bulk to heavy ions.

引用

页码：1450 / 1455

页数：6

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