Silicon Electrodeposition inWater-Soluble KF-KCl Molten Salt: Optimization of Electrolysis Conditions at 923 K

被引：37

作者：

Yasuda, Kouji ^{[1
,2
]}

Maeda, Kazuma ^{[1
]}

Nohira, Toshiyuki ^{[3
]}

Hagiwara, Rika ^{[1
]}

Homma, Takayuki ^{[4
]}

机构：

[1] Kyoto Univ, Grad Sch Energy Sci, Dept Fundamental Energy Sci, Sakyo Ku, Kyoto 6068501, Japan

[2] Kyoto Univ, Environm Safety & Hlth Org, Sakyo Ku, Kyoto 6068501, Japan

[3] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan

[4] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2016年 / 163卷 / 03期

基金：

日本科学技术振兴机构;

关键词：

SOLAR-CELLS;

D O I：

10.1149/2.0791603jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To establish a new Si-electrodeposition process, the optimum conditions for obtaining adherent, compact, and smooth Si films using molten KF-KCl-K2SiF6 were investigated at 923 K. Galvanostatic electrolysis was conducted on a Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10-500 mA cm(-2)) and K2SiF6 concentrations (0.5-5.0 mol%). Cross-sectional scanning electron microscopy (SEM) of the deposits revealed that compact and smooth Si films form at intermediate K2SiF6 concentrations and current densities. The relationship between the deposition conditions and Si morphology is discussed in terms of the electrodeposition mechanism. (C) 2015 The Electrochemical Society. All rights reserved.

引用

页码：D95 / D99

页数：5

共 24 条

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