Transmission electron microscopy: A linewidth measurement technique for lithography

The authors describe preparation methods for patterning high resolution e-beam resists on electron beam transparent samples that facilitate the direct comparison of linewidth measurements from transmission and scanning electron microscopy imaging of the same feature. A goniometer-equipped JEOL 1200EX transmission electron microscope (TEM) with a resolution of 0.45 nm (120 keV) and a JEOL SEM 6500F scanning electron microscope (SEM) with a resolution that varies from 1.5 nm (15 keV) to 5.0 nm (I keV) are used to acquire digital images suitable for linewidth measurements. This comparison emphasizes the differences between TEM images based on mass-absorption contrast and surface topology sensitive SEM images when making linewidth measurements. (c) 2006 American Vacuum Society.