Programming Characteristics of the Steep Turn-on/off Feedback FET (FBFET)

被引：0
|
作者：
Yeung, Chun Wing [1 ]
Padilla, Alvaro [1 ]
Liu, Tsu-Jae King [1 ]
Hu, Chenming [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2009年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The feedback FET is a new steep turn-on/off transistor which achieves six-orders-of-magnitude current change within a 2mV gate voltage step (0.35mV/decade). This device requires an initial programming or conditioning step. Its threshold voltage may be adjusted by Fowler-Nordheim or hot-carrier charge injection. Programming and operation of the device is explained with simulation and experimental data.
引用
收藏
页码：176 / 177
页数：2
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