A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

被引：112

作者：

Meneghini, Matteo ^{[1
]}

Trivellin, Nicola ^{[1
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

Zehnder, Ulrich ^{[2
]}

Hahn, Berthold ^{[2
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] Osram Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 11期

关键词：

Auger effect; electron-hole recombination; electro-optical devices; extrapolation; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; LIFETIME; LASERS;

D O I：

10.1063/1.3266014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an electro-optical method for the extrapolation of the nonradiative and Auger recombination coefficients in InGaN/GaN Light-emitting diodes (LEDs). The method has the advantage of permitting the extrapolation of the recombination parameters of packaged devices, contrary to conventional techniques based on the analysis of quasibulk structures. For the analyzed devices, the average values of the nonradiative and Auger recombination coefficients have been determined to be equal to 2.3x10(7) s(-1) and 1.0x10(-30) cm(6) s(-1), respectively. These results are consistent with previous reports based on the analysis of quasibulk structures and on theoretical simulations. The method described in this paper constitutes an efficient tool for the analysis of the recombination dynamics in GaN-based LEDs. The results obtained within this work support the hypothesis on the importance of Auger recombination in determining the so-called efficiency droop in LED structures.

引用

页数：4

共 11 条

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