Mechanism of organization of three-dimensional islands in SiGe/Si multilayers

被引：136

作者：

Mateeva, E ^{[1
]}

Sutter, P ^{[1
]}

Bean, JC ^{[1
]}

Lagally, MG ^{[1
]}

机构：

[1] UNIV VIRGINIA,CHARLOTTESVILLE,VA 22903

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 22期

关键词：

D O I：

10.1063/1.120300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thp organization of coherent three-dimensional islands during the growth of SiGe/Si multilayers on Si(100) was investigated with cross-sectional transmission electron microscopy. Merging of islands of different initial size is found to be the dominant mechanism leading to a uniform size distribution. Upon overgrowth with Si, we observe a change of the shape of the islands from the {105}-faceted ''hut'' to a boxlike shape bounded on top by a (100) facet. (C) 1997 American Institute of Physics.

引用

页码：3233 / 3235

页数：3

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