Thermodynamic and experimental studies of β-Ga2O3 growth by metalorganic vapor phase epitaxy

Thermodynamic analysis and experimental demonstration of beta-Ga2O3 growth by metalorganic vapor phase epitaxy using triethylgallium (TEG) and oxygen (O-2) precursors were performed. Thermodynamic analysis revealed that the O-2 supplied is preferentially used for the combustion of hydrocarbons and H-2 derived from TEG. Therefore, the use of high growth temperatures and high input VI/III ratios is essential for the complete combustion of hydrocarbons and H-2, and beta-Ga2O3 growth. The use of an inert gas as the carrier gas was also determined as necessary to grow beta-Ga2O3 at high temperatures. Based on these results, a ((2) over bar 01) oriented smooth beta-Ga2O3 layer could be grown on a c-plane sapphire substrate at 900 degrees C with a growth rate of 1.4 mu m h(-1) at an input VI/III ratio of 100. The grown layer showed a clear optical bandgap of 4.84 eV, and impurity concentrations of hydrogen and carbon were below the background levels of the measurement system. (C) 2021 The Japan Society of Applied Physics