Thermodynamic and experimental studies of β-Ga2O3 growth by metalorganic vapor phase epitaxy

被引：23

作者：

Goto, Ken ^{[1
]}

Ikenaga, Kazutada ^{[1
,2
]}

Tanaka, Nami ^{[1
]}

Ishikawa, Masato ^{[3
]}

Machida, Hideaki ^{[3
]}

Kumagai, Yoshinao ^{[1
,4
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[2] Taiyo Nippon Sanso Corp, Minato Ku, Tokyo 1080014, Japan

[3] Gas Phase Growth Ltd, Koganei, Tokyo 1840012, Japan

[4] Tokyo Univ Agr & Technol, Inst Global Innovat Res, Koganei, Tokyo 1848588, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 04期

基金：

日本学术振兴会;

关键词：

HOMOEPITAXIAL GROWTH; THIN-FILMS; LAYERS; MOCVD; MOVPE; SI;

D O I：

10.35848/1347-4065/abec9d

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermodynamic analysis and experimental demonstration of beta-Ga2O3 growth by metalorganic vapor phase epitaxy using triethylgallium (TEG) and oxygen (O-2) precursors were performed. Thermodynamic analysis revealed that the O-2 supplied is preferentially used for the combustion of hydrocarbons and H-2 derived from TEG. Therefore, the use of high growth temperatures and high input VI/III ratios is essential for the complete combustion of hydrocarbons and H-2, and beta-Ga2O3 growth. The use of an inert gas as the carrier gas was also determined as necessary to grow beta-Ga2O3 at high temperatures. Based on these results, a ((2) over bar 01) oriented smooth beta-Ga2O3 layer could be grown on a c-plane sapphire substrate at 900 degrees C with a growth rate of 1.4 mu m h(-1) at an input VI/III ratio of 100. The grown layer showed a clear optical bandgap of 4.84 eV, and impurity concentrations of hydrogen and carbon were below the background levels of the measurement system. (C) 2021 The Japan Society of Applied Physics

引用

页数：8

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