High-Efficiency Perovskite Light-Emitting Diodes with Improved Interfacial Contact

被引：45

作者：

Li, Ruiying ^{[1
]}

Cai, Lei ^{[1
]}

Zou, Yatao ^{[1
]}

Xu, Hao ^{[1
]}

Tan, Yeshu ^{[1
]}

Wang, Yusheng ^{[1
]}

Li, Junnan ^{[1
]}

Wang, Xuechun ^{[1
]}

Li, Ya ^{[1
]}

Qin, Yuanshuai ^{[1
]}

Liang, Dong ^{[1
]}

Song, Tao ^{[1
]}

Sun, Baoquan ^{[1
]}

机构：

[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 32期

基金：

中国国家自然科学基金;

关键词：

perovskite light-emitting diode; light out-coupling efficiency; interfacial contact; charge injection balance; Al2O3; PHOTOLUMINESCENCE; PERFORMANCE; CELLS; LAYER;

D O I：

10.1021/acsami.0c07514

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Unbalanced charge injection is one of the major issues that hampers the efficiency of perovskite light-emitting diodes (PeLEDs). Through engineering the device structure with multiple hole transport layers (HTLs), i.e., poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)diphenylamine) (TFB)/poly(9-vinylcarbazole) (PVK) and nickel oxide (NiOx)/TFB/PVK, efficient PeLED devices have been successfully demonstrated. However, in a typical solution-processed PeLED with multiple HTLs, the underlying conjugated HTL could be easily redissolved by the ink of the following one, which not only dramatically deteriorates the electrical property of HTLs but also influences the quality of the top perovskite films. In this work, through inserting a thin atomic layer-deposited aluminum oxide (Al2O3) layer between HTLs and the perovskite layer, an improved interfacial contact can be achieved, which enables us to obtain perovskite films with enhanced characteristics and balanced charge injection in the resultant PeLEDs. In addition, because of the proper refractive index (r), the presence of the Al2O3 layer also favors the light out-coupling of PeLEDs. As a result, we fabricate green PeLEDs with good repeatability and external quantum efficiency of 17.0%, which is approximately 60% higher than that of the control device without Al2O3. Our work provides a promising avenue to enhance interfacial contact between the charge transport layer and perovskite for efficient perovskite-based optoelectronic devices.

引用

页码：36681 / 36687

页数：7

共 31 条

[1] Solution-processed perovskite light emitting diodes with efficiency exceeding 15% through additive-controlled nanostructure tailoring [J].