A Total Internal Reflection Photoconductive Switch

被引：26

作者：

Bora, Mihail ^{[1
]}

Voss, Lars F. ^{[1
]}

Grivickas, Paulius V. ^{[1
]}

Hall, David L. ^{[1
]}

Alameda, Jennifer B. ^{[1
]}

Kramer, Noah J. ^{[1
]}

Torres, Andrea M. ^{[1
]}

Conway, Adam M. ^{[1
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 05期

关键词：

Optical trapping; photoconductivity; silicon carbide; total internal reflection; PERFORMANCE;

D O I：

10.1109/LED.2019.2903926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a novel illumination technique for extrinsic photoconductive switches based on the creation of a total internal reflection trap to increase the optical path length. The optimal geometry is a square substrate illuminated from one of the corners along the diagonal, ensuringthat the total internal reflection condition is maintained after any reflection off the device lateral sides. The optical absorption uniformity throughout the device bulk was improved by designing the entry window to have a cylindrical shape and by using a square core optical fiber as an illumination source. The concept is experimentally validated on a vanadium-doped silicon carbide device that shows approximately four-fold improvement in responsivity compared to normal illumination.

引用

收藏

页码：734 / 737

页数：4

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