A 0.3-3.5 GHz active-feedback low-noise amplifier with linearization design for wideband receivers

被引:33
作者
Huang, Dong [1 ]
Yang, Xiaofeng [1 ]
Chen, Haifeng [1 ]
Khan, Muhammad Imran [2 ,3 ]
Lin, Fujiang [3 ]
机构
[1] Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710100, Shaanxi, Peoples R China
[2] UET, Dept Elect Engn, Taxila 47050, Pakistan
[3] Univ Sci & Technol China, Micronano Elect Syst Integrat R&D Ctr MESIC, Hefei 230027, Anhui, Peoples R China
关键词
Active feedback; CMOS; Complementarysource follower; Linear; LNA; Post-distortion; Wideband; CMOS LNA; NM CMOS; INDUCTOR; LINEARITY;
D O I
10.1016/j.aeue.2017.12.003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
LNAs for wideband receivers usually require a high linearity to protect the desired signals from out-band interference. Active feedback LNAs always suffer from the nonlinear feedback of source follower, and present a poor linearity. In order to solve this problem, a complementary source follower (CSF) is proposed, which utilizes the different characteristic of NMOS and PMOS to linearize the source follower, leading to an improvement of LNA's IIP3 and IIP2 by about 10 dBm and 21 dBm respectively. In addition, a post-distortion technique is also used on the common source stage, which further enhances the IIP3 by about 2 dBm and IIP2 by 11 dBm. After using the two techniques, the noise figure (NF) does not deteriorate; instead it achieves a 0.3 dB improvement. A prototype is designed in TSMC 0.18 mu m CMOS process, and a 14.8 mW power is dissipated from a 1.6 V supply. In typical process corner, across 0.3 to 3.5 GHz, this LNA achieves a 14.6 dB gain, a 2.9 dB minimum NF, and an IIP2 larger than + 22 dBm and IIP3 larger than +1.2 dBm.
引用
收藏
页码:192 / 198
页数:7
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