Linear antenna microwave plasma CVD diamond deposition at the edge of no-growth region of C-H-O ternary diagram

被引：21
作者：
Potocky, Stepan [1 ]
Babchenko, Oleg [1 ]
Hruska, Karel [1 ]
Kromka, Alexander [1 ]
机构：
[1] Inst Phys AS CR, Vvi, Prague 16200, Czech Republic
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2012年 / 249卷 / 12期
关键词：
C-H-O phase diagram; nanocrystalline diamond; plasma enhanced CVD; Raman spectroscopy; SEM; CHEMICAL-VAPOR-DEPOSITION; FILMS; PHASE; KINETICS; OXYGEN;
D O I：
10.1002/pssb.201200124
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The process parametric window for diamond deposition using the chemical vapor deposition at low pressures is quite limited where addition of oxygen in the gas phase broadens this window. The lower boundary of the lens-shaped domain in C?H?O ternary diagram concurs with the H2?CO tie-line (C/(C?+?O)?=?0.5). In this work, we present the set of experiments where the ratio of C/(C?+?O) was kept at a constant value 0.385. The effect of hydrogen concentration (ratio O/(O?+?H) varied from 0.047 to 0.364) on plasma characteristics and deposited NCD films were investigated. Raman spectroscopy confirmed the diamond character of all deposited coatings while scanning electron microscopy showed transformation from not closed to continuous film and further decrease of grain size and finally growth of diamond nanowires while decreasing hydrogen concentration in a gas mixture. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：2612 / 2615
页数：4
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