Influence of substrate temperature and post-treatment on the properties of ZnO:Al thin films prepared by pulsed laser deposition

被引：70

作者：

Chen, X ^{[1
]}

Guan, WJ ^{[1
]}

Fang, GJ ^{[1
]}

Zhao, XZ ^{[1
]}

机构：

[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2005年 / 252卷 / 05期

基金：

中国国家自然科学基金;

关键词：

AZO films; substrate temperature; post-deposition annealing; pulsed laser deposition;

D O I：

10.1016/j.apsusc.2005.02.137

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Highly transparent conductive Al2O3 doped zinc oxide (AZO) thin films have been deposited on the glass substrate by pulsed laser deposition technique. The effects of substrate temperature and post-deposition annealing treatment on structural, electrical and optical properties of AZO thin films were investigated. The experimental results show that the electrical resistivity of films deposited at 240 degrees C is 6.1 X 10(-4) Omega CM, which can be further reduced to as low as 4.7 x 10(-4) Omega cm by post-deposition annealing at 400 degrees C for 2 h in argon. The average transmission of AZO films in the visible range is 90%. The optical direct band gap of films was dependent on the substrate temperature and the annealing treatment in argon. The optical direct band gap value of AZO films increased with increasing annealing temperature. (c) 2005 Elsevier B.V. All fights reserved.

引用

页码：1561 / 1567

页数：7

共 34 条

[1] STRUCTURE OF INDIUM OXIDE TIN OXIDE TRANSPARENT CONDUCTING FILMS BY ELECTRON-DIFFRACTION AND ELECTRON SPECTROSCOPY [J].