Effect of retrapping on photostimulated luminescence in Sr3SiO5: Eu2+, Dy3+ phosphor

被引：35

作者：

Sun, Xiaoyuan ^{[1
,2
]}

Zhang, Jiahua ^{[1
]}

Zhang, Xia ^{[1
]}

Luo, Yongshi ^{[1
]}

Hao, Zhendong ^{[1
]}

Wang, Xiao-jun ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Changchun Normal Univ, Dept Phys, Changchun 130032, Peoples R China

[3] Georgia So Univ, Dept Phys, Statesboro, GA 30460 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 01期

基金：

美国国家科学基金会;

关键词：

ELECTRON TRAPPING MATERIALS; MEMORY;

D O I：

10.1063/1.3050330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sr3SiO5: Eu2+, Dy3+ exhibits a strong orange phosphorescence and photostimulated luminescence, originating from 4f(6)5d-4f(7) transition of Eu2+, after ultraviolet exposure. Shallow and deep traps are evidenced by thermoluminescence spectrum and decay curve of phosphorescence, which consists of a very fast and a slow component. The photostimulated luminescence presents a slow rising and a falling edge as an infrared excitation at 808 nm is turned on and off, respectively. This is attributed to the result of electron retrapping by shallow traps based on the analysis of dynamical process in photostimulated luminescence involved in photostimulated depopulation of deep traps. The electrons retrapped by deep traps is also demonstrated in the time interval between photostimulation off and on, which results in an enhanced rising edge relative to the former falling edge. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3050330]

引用

页数：4

共 19 条

[1] OPTICAL AND ELECTRICAL PROPERTIES OF SRAL2O4-EU2+ [J].