Noise coefficients of backscattered electron detectors for low voltage scanning electron microscopy

被引:1
作者
Hejna, J. [1 ]
机构
[1] Wroclaw Univ Technol, Inst Mat Sci & Appl Mech, PL-50370 Wroclaw, Poland
关键词
noise coefficient; low voltage; scanning electron microscopy; electron detector; Backscattered electrons; MICROCHANNEL-PLATE DETECTOR; STATISTICAL-MODEL; PERFORMANCE; SEM;
D O I
10.1111/jmi.12066
中图分类号
TH742 [显微镜];
学科分类号
摘要
Summary Noise coefficients of backscattered electron (BSE) detectors for low voltage scanning electron microscopy were studied theoretically and experimentally. The conversion method of BSE detection, the scintillation detector with an acceleration of BSE and detectors with electron multipliers were considered. Formulae for noise coefficients were derived and noise coefficients of detectors were computed for different values of gains of detectors' components. Theoretical predictions of noise coefficients were compared with experimental results.
引用
收藏
页码:35 / 48
页数:14
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