Computer simulation of reactive sputtering

被引:0
作者
Zhu, SL
Wang, FH
Wu, WT
Xin, L
Hu, CS
Yang, SL
Geng, SJ
Li, MS
Xiong, YM
Chen, KW
机构
[1] Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110015, Peoples R China
[2] Fushun Petr Inst, Fushun 113001, Peoples R China
关键词
reactive sputtering; computer simulation; kinetics modeling;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Computer simulations of direct current reactive sputtering based on a kinetics model were carried out in this article. It was revealed that, reactive sputtering exhibited steady state transition-free and hysteresis-free behavior, only when the sputtering yield of compound was approximately that of the corresponding metal. By changing the configuration of the sputter system (discharge current, target area, pumping rate), it was possible to get a hysteresis-free reactive sputtering behavior. However, it was too difficult to eliminate the steady states transition by this method. The much lower value of the sputtering yield, as compared with that of the corresponding metal, might be the most important cause of the steady state transition and hysteresis effect.
引用
收藏
页码:101 / 106
页数:6
相关论文
共 12 条