Effect of impurity concentration on hot-carrier-effect in deep-sub-micron grooved gate PMOSFETs

Based on the hydro-dynamics energy transport model, the influence of channel and substrate doping density on the hot-carrier-effect immunity in deep-sub-micron grooved gate PMOSFET's is studied and explained in terms of device interior physics mechanism. The research results indicate that with the increase of doping density in the channel, the hot-carrier-effect immunity becomes better. While as doping density in substrate rises, the hot-carrier-effect immunity becomes worse. Those mean because that the structure parameters influence the electric field distribution in device and "corner effect" and so do the transportation of carriers.