Glass-Assisted Chemical Vapor Deposition-Grown Monolayer MoS2: Effective Control of Size Distribution via Surface Patterning

被引:3
作者
Aras, Fikret Gonca [1 ]
Avad, Jihad [2 ]
Yeltik, Aydan [1 ]
机构
[1] TOBB Univ Econ & Technol, Dept Mat Sci & Nanotechnol Engn, TR-06560 Ankara, Turkey
[2] Eskisehir Tech Univ, Dept Elect & Elect Engn, TR-26555 Eskisehir, Turkey
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 24期
关键词
2D materials; chemical vapor deposition; nucleation density; pattern-mediated growth; size distributions; transition metal dichalcogenides; LARGE SINGLE-CRYSTAL; LAYER MOS2; EPITAXIAL-GROWTH; TRANSISTORS; GRAPHENE; OXIDE; PHOTOLUMINESCENCE; SUBSTRATE;
D O I
10.1002/pssa.202200503
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics owing to their unique optical and electronic functionalities. Although atomically thin flat TMD layers have been investigated in various device applications, pattern-mediated growth serves great promise for revealing novel properties and application opportunities of TMDs. Herein, controlled size distribution of CVD-grown monolayer MoS2 flakes by varying the distance between surface pattern features and the effects of patterning on the optical properties of MoS2 domains is reported. Larger flakes and higher uniformity in size distribution are obtained via patterning in comparison with the results from bare surface. Superior photoluminescence (PL) performances are observed for the 2D MoS2 grown on the pattern valleys when compared with the sample on the hill regions and the bare surface. The results demonstrate the notable potential of 2D TMDs for applications in electronics and optoelectronics.
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页数:8
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