Electronic properties and structural phase transition in A4 [M4O4] (A=Li, Na, K and Rb; M=Ag and Cu): A first principles study

被引:13
作者
Umamaheswari, R. [1 ]
Yogeswari, M. [1 ]
Kalpana, G. [1 ]
机构
[1] Anna Univ, Dept Phys, Madras 600025, Tamil Nadu, India
关键词
Half-Heusler materials; Electronic structure; Phase transition; High pressure; CRYSTAL; COPPER; KAGO;
D O I
10.1016/j.ssc.2012.10.016
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Self-consistent scalar relativistic band structure calculations for AMO (A=Li, Na, K and Rb; M=Ag and Cu) compounds have been performed using the tight-binding linear muffin-tin orbital (TB-LMTO) method within the local density approximation (LDA). At ambient conditions, these compounds are found to crystallize in tetragonal KAgO-type structure with two different space group I-4m2 and I4/mmm. Nowadays, hypothetical structures are being considered to look for new functional materials. AMO compounds have stoichiometry similar to eight-electron half-Heusler materials of type I-I-VI which crystallizes in cubic (C1(b)) MgAgAs-type structure with space group F-43m. For all these compounds, by interchanging the positions of atoms in the hypothetical cubic structure, three phases (alpha, beta and gamma) are formed. The energy-volume relation for these compounds in tetragonal KAgO-type structure and cubic alpha, beta and gamma phases of related structure have been obtained. Under ambient conditions these compounds are more stable in tetragonal KAgO-type (I4/mmm) structure. The total energies calculated within the atomic sphere approximation (ASA) were used to determine the ground state properties such as equilibrium lattice parameters, c/a ratio, bulk modulus, cohesive energy and are compared with the available experimental results. The results of the electronic band structure calculations at ambient condition show that LiCuO and NaMO are indirect band gap semiconductors whereas KMO and RbMO are direct band gap semiconductors. At high pressure the band gap decreases and the phenomenon of band overlap metallization occur. Also these compounds undergo structural phase transition from tetragonal I-4m2 phase to cubic alpha-phase and transition pressures were calculated. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:62 / 68
页数:7
相关论文
共 24 条
[1]   EXPLICIT, 1ST-PRINCIPLES TIGHT-BINDING THEORY [J].
ANDERSEN, OK ;
JEPSEN, O .
PHYSICAL REVIEW LETTERS, 1984, 53 (27) :2571-2574
[2]   FINITE STRAIN ISOTHERM AND VELOCITIES FOR SINGLE-CRYSTAL AND POLYCRYSTALLINE NACL AT HIGH-PRESSURES AND 300-DEGREE-K [J].
BIRCH, F .
JOURNAL OF GEOPHYSICAL RESEARCH, 1978, 83 (NB3) :1257-1268
[3]   ELECTRONIC-STRUCTURE OF LIZNN - INTERSTITIAL INSERTION RULE [J].
CARLSSON, AE ;
ZUNGER, A ;
WOOD, DM .
PHYSICAL REVIEW B, 1985, 32 (02) :1386-1389
[4]   ON THE KAGO-STRUCTURE - REINVESTIGATION OF NA-RBNA-RBGO=NARB4[NA-RBG4O4] (A = NA-RB) - WITH A NOTE ON CSCUO AND NEW CALCULATIONS ON LI-RB4[CU4O4], CS4[AG4O4] [J].
FISCHER, D ;
CARL, W ;
GLAUM, H ;
HOPPE, R .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1990, 585 (06) :75-81
[5]   Some factors governing Ag+ and Cu+ low coordination in chalcogenide environments [J].
Gaudin, E ;
Boucher, F ;
Evain, M .
JOURNAL OF SOLID STATE CHEMISTRY, 2001, 160 (01) :212-221
[6]   Comparative ab initio study of half-Heusler compounds for optoelectronic applications [J].
Gruhn, Thomas .
PHYSICAL REVIEW B, 2010, 82 (12)
[7]   Noncentrosymmetric oxides [J].
Halasyamani, PS ;
Poeppelmeier, KR .
CHEMISTRY OF MATERIALS, 1998, 10 (10) :2753-2769
[8]   CUBIC FORMS OF NALNO2 AND NAERO2 [J].
HESTERMANN, K ;
HOPPE, R .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1968, 361 (3-4) :121-+
[9]   INHOMOGENEOUS ELECTRON-GAS [J].
RAJAGOPAL, AK ;
CALLAWAY, J .
PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919
[10]   NEW OXOCUPRATES(I) - NACUO AND RBCUO [J].
HOPPE, R ;
HESTERMA.K ;
SCHENK, F .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1969, 367 (5-6) :275-&