Femtosecond laser photo-response of Ge23Sb7S70 films

被引：25
作者：
Anderson, Troy [3 ]
Petit, Laeticia [2 ]
Carlie, Nathan [2 ]
Choi, Jiyeon [3 ]
Hu, Juejun [1 ]
Agarwal, Anu [1 ]
Kimerling, Lionel [1 ]
Richardson, Kathleen [2 ]
Richardson, Martin [3 ]
机构：
[1] MIT, Microphoton Ctr, Cambridge, MA 02139 USA
[2] Clemson Univ, Adv Mat Res Lab, Anderson, SC 29625 USA
[3] Univ Cent Florida, Coll Opt CREOL, Orlando, FL 32816 USA
来源：
OPTICS EXPRESS | 2008年 / 16卷 / 24期
关键词：
D O I：
10.1364/OE.16.020081
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film's surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, the number of laser pulses per focal spot, and repetition rate. Film response was shown to be related to deposition technique-related density and the number of glass bonds within the irradiated focal volume. The induced changes resulted from a reduction in glass network connectivity among GeS4/2, GeS4, S-S and S3Ge-S-GeS3 units. (C) 2008 Optical Society of America
引用
收藏
页码：20081 / 20098
页数：18
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