Circuit Design of a Compact 5-kV W-Band Extended Interaction Klystron

被引:26
作者
Chang, Zhiwei [1 ]
Meng, Lin [1 ]
Yin, Yong [1 ]
Wang, Bin [1 ]
Li, Hailong [1 ]
Rauf, Abdur [1 ]
Ullah, Safi [1 ]
Bi, Liangjie [1 ]
Peng, Ruibin [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Phys Elect, Vacuum Elect Natl Lab, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
Circuit stability; extended interaction Kly-stron; ladder-type; low voltage; millimeter-wave (mmW); mode competition; particle-in-cell simulation; W-band;
D O I
10.1109/TED.2018.2797051
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low voltage (5 kV) ladder-type circuit is designed for the compactW-band extended interaction Klystron (EIK). Characteristics of the low voltage circuit are studied, synchronism relationship and electric field distribution are analyzed and optimized, and discussions on the circuit stability are embedded in the circuit design. In this paper, efficiency declineof the lowvoltage circuit is studied; two competingmodes (2 pi cavitymode and upper pi/8mode) are observed, analyzed and suppressed. All of these efforts resulted in a low voltageW-band ladder-type EIK circuitwith high stability and feasibility.
引用
收藏
页码:1179 / 1184
页数:6
相关论文
共 18 条
[1]   Millimeter-wave and Sub-millimeter-wave Vacuum Electronics Amplifier Development at the US Naval Research Laboratory [J].
Abe, David K. ;
Calame, Jeffrey P. ;
Joye, Colin D. ;
Cook, Alan M. ;
Pasour, John ;
Cooke, Simon ;
Vlasov, Alexander N. ;
Chernyavskiy, Igor A. ;
Levush, Baruch ;
Nguyen, Khanh T. ;
Pershing, Dean E. ;
Chernin, David .
TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS VI, 2013, 8624
[2]  
[Anonymous], 2012, IEEE MTT S INT MICRO
[3]  
[Anonymous], 2014, CST MICR STUD
[4]   Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90% [J].
Baikov, Andrey Yu. ;
Marrelli, Chiara ;
Syratchev, Igor .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) :3406-3412
[5]   Practical Aspects of EIK Technology [J].
Berry, Dave ;
Deng, Henry ;
Dobbs, Richard ;
Horoyski, Peter ;
Hyttinen, Mark ;
Kingsmill, Andrew ;
MacHattie, Ross ;
Roitman, Albert ;
Sokol, Ed ;
Steer, Brian .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (06) :1830-1835
[6]   Vacuum Electronic High Power Terahertz Sources [J].
Booske, John H. ;
Dobbs, Richard J. ;
Joye, Colin D. ;
Kory, Carol L. ;
Neil, George R. ;
Park, Gun-Sik ;
Park, Jaehun ;
Temkin, Richard J. .
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2011, 1 (01) :54-75
[7]  
BROWN KW, 2015, P IEEE COMP SEM INT, P1, DOI DOI 10.1109/CSICS.2015.7314529
[8]  
Chang YC, 2016, PROCEEDINGS OF THE IEEE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR SCIENCE AND ENGINEERING (IEEE-ICAMSE 2016), P1, DOI 10.1109/ICAMSE.2016.7840215
[9]  
Chodorow M., 1961, IRE T ELECT DEVICES, V8, P44, DOI [10.1109/t-ed.1961.14708, DOI 10.1109/T-ED.1961.14708]
[10]  
Ding Y., 2008, THEORY COMPUTER SIMU