The electron beam induced short lived absorption in PLZT optical ceramics

被引:1
作者
Millers, D. [1 ]
Dimza, V. [1 ]
Grigorjeva, L. [1 ]
Antonova, M. [1 ]
Smits, K. [1 ]
Livins, M. [1 ]
机构
[1] Univ Latvia, Inst Solid State Phys, LV-1063 Riga, Latvia
关键词
PLZT ceramic; Short lived absorption; Delayed rise; LUMINESCENCE; CRYSTALS; FERROELECTRICS; EXCITATION; DEFECTS; GLASSES;
D O I
10.1016/j.optmat.2012.12.029
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The short lived absorption induced by a pulsed electron beam in the led-lanthanum-zirconate-titanate (PLZT) optical ceramics was studied. The measured absorption spectrum covers 1.1-2.9 eV energy range and consists of several strongly overlapping peaks. The rise of the absorption is delayed with respect to the excitation pulse, due to charge carrier migration before trapping at centers responsible for the absorption. The formation rate of absorption centers and decay rate of absorption depend on the photon energy. The kinetics of short lived absorption varies over spectrum and can be approximated with a stretched exponent. The stretched exponent parameters indicate that the local disorder of a matrix is similar around all absorption centers. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:1090 / 1094
页数:5
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