p-type conduction in transparent semiconductor ZnO thin films induced by electron cyclotron resonance N2O plasma

p-Type conduction in transparent ZnO films grown by electron cyclotron resonance (ECR) N2O plasma-enhanced pulsed laser reactive deposition has been induced by incorporating active N radical species created in N2O plasma within the ZnO films. N impurity has been shown experimentally to be an effective acceptor for producing shallow p-type dopant in ZnO films, which is consistent with previously published conclusions [1]. The room-temperature resistivity and carrier density of the as-grown p-type ZnO films are in the range 2-5 Omega cm and 4-6 x 10(18) cm(-3), respectively. These properties provide the practical basis for potential applications of ZnO films in LEDs. The p-type conduction properties may be improved by further increasing the emitting proportion of active N radical species from a plasma source. (C) 2002 Elsevier Science B.V. All rights reserved.