Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation

被引:0
作者
Ota, Hiroyuki [1 ]
Fukuda, Koichi [1 ]
Ikegami, Tsutomu [1 ]
Hattori, Junichi [1 ]
Asai, Hidehiro [1 ]
Migita, Shinji [1 ]
Toriumi, Akira [2 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Ibaraki, Japan
[2] Univ Tokyo, Grad Sch Engn, Tokyo, Japan
来源
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年
基金
日本科学技术振兴机构;
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Stability and instability of the negative capacitance (NC) states in metal (M) / ferroelectric (F) /M /insulator (I) /semiconductor (S) structures are rigorously studied using a newly developed transient TCAD simulation, in which time-dependent Landau-Khalatnikov (LK) equation can be considered. Our transient analysis reveals that NC becomes unstable due to formation of the inversion layer and gives rise to hysteresis in the NC-state, which cannot be simulated by the steady simulation. We propose a novel FinFET, in which the F-layer is located at the gate contact holes and exhibit a design guideline to avoid the instability of the NC-state using experimentally obtained ferroelectric parameters for (Hf,Zr)O-2.
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页数:4
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