Nitrogen vacancy effects on the ferromagnetism of Mn doped GaN films

被引：8

作者：

Hu, B. ^{[1
]}

Man, B. Y. ^{[1
]}

Liu, M. ^{[1
]}

Yang, C. ^{[1
]}

Chen, C. S. ^{[1
]}

Gao, X. G. ^{[1
]}

Xu, S. C. ^{[1
]}

Wang, C. C. ^{[1
]}

Sun, Z. C. ^{[1
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 108卷 / 02期

基金：

中国国家自然科学基金;

关键词：

RAMAN-SCATTERING; TEMPERATURE FERROMAGNETISM; MAGNETIC-PROPERTIES; GROWTH; (GA; MN)N; ZNO;

D O I：

10.1007/s00339-012-6900-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The amorphous gallium nitride thin films doped with Mn were deposited by Laser assisted Molecular Beam Epitaxy (LMBE). After annealing at different NH3 flow rates, the high-quality GaMnN crystalline films with different concentration of nitrogen vacancies (V (N)) were obtained, which were confirmed by the X-ray diffraction spectroscopy and Raman measurements. The magnetic behaviors of these films were also obtained to investigate the effects of nitrogen vacancies. It indicates that V (N) play a significant role in the origin of ferromagnetism. The stronger room-temperature ferromagnetism is given with the higher V (N) concentration when it is not beyond a critical concentration. Moreover, from our M(T) curves and Raman analysis, the films present high resistivity. The magnetism of films with high resistivity varies with concentration of nitrogen vacancies, which can be explained by the bound magnetic polarons (BMP) theory.

引用

页码：409 / 413

页数：5

共 23 条

[21] Raman scattering and high temperature ferromagnetism of Mn-doped ZnO nanoparticles
Wang, J. B.
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