Nitrogen vacancy effects on the ferromagnetism of Mn doped GaN films

被引：8
作者：
Hu, B. [1 ]
Man, B. Y. [1 ]
Liu, M. [1 ]
Yang, C. [1 ]
Chen, C. S. [1 ]
Gao, X. G. [1 ]
Xu, S. C. [1 ]
Wang, C. C. [1 ]
Sun, Z. C. [1 ]
机构：
[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 108卷 / 02期
基金：
中国国家自然科学基金;
关键词：
RAMAN-SCATTERING; TEMPERATURE FERROMAGNETISM; MAGNETIC-PROPERTIES; GROWTH; (GA; MN)N; ZNO;
D O I：
10.1007/s00339-012-6900-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The amorphous gallium nitride thin films doped with Mn were deposited by Laser assisted Molecular Beam Epitaxy (LMBE). After annealing at different NH3 flow rates, the high-quality GaMnN crystalline films with different concentration of nitrogen vacancies (V (N)) were obtained, which were confirmed by the X-ray diffraction spectroscopy and Raman measurements. The magnetic behaviors of these films were also obtained to investigate the effects of nitrogen vacancies. It indicates that V (N) play a significant role in the origin of ferromagnetism. The stronger room-temperature ferromagnetism is given with the higher V (N) concentration when it is not beyond a critical concentration. Moreover, from our M(T) curves and Raman analysis, the films present high resistivity. The magnetism of films with high resistivity varies with concentration of nitrogen vacancies, which can be explained by the bound magnetic polarons (BMP) theory.
引用
收藏
页码：409 / 413
页数：5
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共 23 条
  • [1] Influence of 3d-transition-metal additives on single crystal growth of GaN by the Na flux method
    Aoki, M
    Yamane, H
    Shimada, M
    Sarayama, S
    Iwata, H
    Disalvo, FJ
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (9A): : 5445 - 5449
  • [2] Enhancement of ferromagnetism upon thermal annealing in pure ZnO
    Banerjee, S.
    Mandal, M.
    Gayathri, N.
    Sardar, M.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (18)
  • [3] Defect induced low temperature ferromagnetism in Zn1-xCoxO films
    Biegger, E.
    Fonin, M.
    Ruediger, U.
    Janssen, N.
    Beyer, M.
    Thomay, T.
    Bratschitsch, R.
    Dedkov, Yu. S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
  • [4] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
    CAMPBELL, IH
    FAUCHET, PM
    [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
  • [5] Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN
    Chen, Di
    Ding, Zhibo
    Yao, Shude
    Hua, Wei
    Wang, Kun
    Chen, Tianxiang
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (12-13) : 2797 - 2800
  • [6] MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties
    Chen, PP
    Makino, H
    Kim, JJ
    Yao, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 331 - 336
  • [7] Donor impurity band exchange in dilute ferromagnetic oxides
    Coey, JMD
    Venkatesan, M
    Fitzgerald, CB
    [J]. NATURE MATERIALS, 2005, 4 (02) : 173 - 179
  • [8] Structural and magnetic properties in Mn-doped GaN grown by metal organic chemical vapor deposition
    Cui, X. G.
    Tao, Z. K.
    Zhang, R.
    Li, X.
    Xiu, X. Q.
    Xie, Z. L.
    Gu, S. L.
    Han, P.
    Shi, Y.
    Zheng, Y. D.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (15)
  • [9] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
    Dietl, T
    Ohno, H
    Matsukura, F
    Cibert, J
    Ferrand, D
    [J]. SCIENCE, 2000, 287 (5455) : 1019 - 1022
  • [10] Raman scattering study of Ga1-xMnxN crystals
    Gebicki, W
    Strzeszewski, J
    Kamler, G
    Szyszko, T
    Podsiadlo, S
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (26) : 3870 - 3872
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