Effects of aluminum doping on lanthanum oxide gate dielectric films

被引：18

作者：

Wong, Hei ^{[1
]}

Yang, B. L. ^{[1
]}

Kakushima, K. ^{[2
]}

Ahmet, P. ^{[2
]}

Iwai, H. ^{[2
]}

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China

[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan

来源：

VACUUM | 2012年 / 86卷 / 07期

关键词：

Interface properties; Lanthanum oxide; Aluminum doping; SI SUBSTRATE; DEPOSITION; SILICON; INTERFACE;

D O I：

10.1016/j.vacuum.2011.06.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports a novel method for improving the electrical properties of lanthanum gate oxide (La2O3) by using aluminum doping and rapid thermal annealing (RTA) techniques. In the bulk of the AI-doped La2O3 film together with 600 degrees C RTA, we found that the aluminum atoms were incorporated into the oxide network and the film was transformed into lanthanum aluminate complex oxide. At the interface, a thin Al2O3 layer was formed. This interfacial Al2O3 layer suppressed the out-diffusion of substrate Si, the formation of interfacial silicate layer and silicide bonds. These effects resulted in a significant reduction on the bulk and interface trap densities and hence the gate leakage current. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：929 / 932

页数：4

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