Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface

被引：10

作者：

Ding, Manli ^{[1
]}

Poon, S. Joseph ^{[1
]}

机构：

[1] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 12期

关键词：

ANISOTROPY; MULTILAYERS;

D O I：

10.1063/1.4754001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of Co20Fe50Ge30 films on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with an optimized magnetic anisotropy energy density of 2 x 10(6) erg/cm(3). The magnetic anisotropy is found to depend strongly on the thickness of the MgO and Co20Fe50Ge30 layers, indicating that the perpendicular magnetic anisotropy of Co20Fe50Ge30 is contributed by the interfacial anisotropy between Co20Fe50Ge30 and MgO. With reported low damping constant, Co20Fe50Ge30 films are promising spintronic materials for achieving low switching current. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754001]

引用

页数：4

共 17 条

[1] MAGNETIC INTERFACE ANISOTROPY IN PD/CO AND PD/FE MULTILAYERS [J].

DRAAISMA, HJG ;

DEJONGE, WJM ;

DENBROEDER, FJA .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1987, 66 (03) :351-355

[2] Spin-torque oscillator using a perpendicular polarizer and a planar free layer [J].

Houssameddine, D. ;

Ebels, U. ;

Delaet, B. ;

Rodmacq, B. ;

Firastrau, I. ;

Ponthenier, F. ;

Brunet, M. ;

Thirion, C. ;

Michel, J.-P. ;

Prejbeanu-Buda, L. ;

Cyrille, M.-C. ;

Redon, O. ;

Dieny, B. .

NATURE MATERIALS, 2007, 6 (06) :447-453

[3]

Ikeda S, 2010, NAT MATER, V9, P721, DOI [10.1038/NMAT2804, 10.1038/nmat2804]

[4] Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature [J].

Ikeda, S. ;

Hayakawa, J. ;

Ashizawa, Y. ;

Lee, Y. M. ;

Miura, K. ;

Hasegawa, H. ;

Tsunoda, M. ;

Matsukura, F. ;

Ohno, H. .

APPLIED PHYSICS LETTERS, 2008, 93 (08)

[5] Magnetic anisotropy in metallic multilayers [J].

Johnson, MT ;

Bloemen, PJH ;

denBroeder, FJA ;

deVries, JJ .

REPORTS ON PROGRESS IN PHYSICS, 1996, 59 (11) :1409-1458

[6] Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes [J].

Kim, Gukcheon ;

Sakuraba, Yuya ;

Oogane, Mikihiko ;

Ando, Yasuo ;

Miyazaki, Terunobu .

APPLIED PHYSICS LETTERS, 2008, 92 (17)

[7] Magnetization relaxation and structure of CoFeGe alloys [J].

Lee, H. ;

Wang, Y. -H. A. ;

Mewes, C. K. A. ;

Butler, W. H. ;

Mewes, T. ;

Maat, S. ;

York, B. ;

Carey, M. J. ;

Childress, J. R. .

APPLIED PHYSICS LETTERS, 2009, 95 (08)

[8] Current perpendicular to the plane spin-valves with CoFeGe magnetic layers [J].

Maat, S. ;

Carey, M. J. ;

Childress, J. R. .

APPLIED PHYSICS LETTERS, 2008, 93 (14)

[9] Analysis of oxygen induced anisotropy crossover in Pt/Co/MOx trilayers [J].

Manchon, A. ;

Ducruet, C. ;

Lombard, L. ;

Auffret, S. ;

Rodmacq, B. ;

Dieny, B. ;

Pizzini, S. ;

Vogel, J. ;

Uhlir, V. ;

Hochstrasser, M. ;

Panaccione, G. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (04)

[10] Current-induced magnetization reversal in nanopillars with perpendicular anisotropy [J].

Mangin, S ;

Ravelosona, D ;

Katine, JA ;

Carey, MJ ;

Terris, BD ;

Fullerton, EE .

NATURE MATERIALS, 2006, 5 (03) :210-215

← 1 2 →