The Method of a Fast Electrothermal Transient Analysis of Single-Inductance DC-DC Converters

被引：36

作者：

Gorecki, Krzysztof ^{[1
]}

Zarebski, Janusz ^{[1
]}

机构：

[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2012年 / 27卷 / 09期

关键词：

Convolution algorithms; dc-dc converters; electrothermal analysis; TIME-DOMAIN ANALYSIS; CONVOLUTION ALGORITHMS; THERMAL-MODEL; POWER; SIMULATION; NETWORKS;

D O I：

10.1109/TPEL.2012.2188546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new method for fast estimation of the characteristics of single-inductance dc-dc converters at the steady state with self-heating taken into account is proposed. This method is based on the special memoryless convolution algorithm. The method is described in detail. The theoretical considerations are illustrated with simulation results of buck and boost converters.

引用

页码：4005 / 4012

页数：8

共 43 条

[1] Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part I: Fundamentals and theory [J].

Bagnoli, PE ;

Casarosa, C ;

Ciampi, M ;

Dallago, E .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 1998, 13 (06) :1208-1219

[2]

Basso C., 2001, Switch-Mode Power Supply Spice Cookbook

[3] TIME-DOMAIN ANALYSIS OF NETWORKS WITH INTERNALLY CONTROLLED SWITCHES [J].

BEDROSIAN, D ;

VLACH, J .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 1992, 39 (03) :199-212

[4] ANALYSIS OF SWITCHED NETWORKS [J].

BEDROSIAN, D ;

VLACH, J .

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 1992, 20 (03) :309-325

[5] Analysis of switching effects in DC-DC converters via bias point computation [J].

Biolek, Dalibor ;

Biolkova, Viera ;

Kolka, Zdenek .

2007 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN, VOLS 1-3, 2007, :1006-+

[6]

Biolek D, 2007, 2007 17TH INTERNATIONAL CONFERENCE RADIOELEKTRONIKA, VOLS 1 AND 2, P168

[7] TRANSIENT THERMAL RESPONSE MEASUREMENTS OF POWER TRANSISTORS [J].

BLACKBURN, DL ;

OETTINGER, FF .

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS AND CONTROL INSTRUMENTATION, 1975, IE22 (02) :134-141

[8]

Bryant AT, 2006, IEEE IND APPLIC SOC, P1465

[9] Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet [J].

Castellazzi, Alberto ;

Gerstenmaier, York C. ;

Wachutka, Gerhard K. M. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2006, 21 (03) :603-612

[10]

Chua LO, 1975, COMPUTER AIDED ANAL

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