Investigation of photoelectrical properties of CdSe nanocrystals embedded in a SiO2 matrix

被引：7

作者：

Kafadaryan, E. A. ^{[1
]}

Levichev, S. ^{[2
]}

Pinto, S. R. C. ^{[2
]}

Aghamalyan, N. R. ^{[1
]}

Hovsepyan, R. K. ^{[1
]}

Badalyan, G. R. ^{[1
]}

Chahboun, A. ^{[2
,3
]}

Rolo, A. G. ^{[2
]}

Gomes, M. J. M. ^{[2
]}

机构：

[1] Natl Acad Sci, Inst Phys Res, Ashtarak 378410 2, Armenia

[2] Univ Minho, Dept Phys, P-4710057 Braga, Portugal

[3] Dhar El Mahraz Sci Fac, Dept Phys, LPS, Fes, Morocco

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 09期

关键词：

D O I：

10.1088/0268-1242/23/9/095025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CdSe nanocrystals (NCs) embedded in SiO2 thin films were prepared using RF-magnetron co-sputtering. The average NC size was estimated to be 18 nm. The dark and photocurrent temporal dependences have been measured as a function of the magnitude of applied voltage (50-150 V). Annealing the samples seems to improve the photoconductivity (similar to 10(-12) Omega(-1)) that increases with the film thickness and slightly changes under the bias voltage. Furthermore, the photovoltage measurements showed that a concentration of CdSe in the range of 27 mol% leads to the generation of a photovoltaic signal up to 5 V at 400 mu W cm(-2). These results demonstrate the potential of silica films with embedded CdSe NCs for photovoltaic applications.

引用

页数：5

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