A theoretical study for high-performance inverted p-i-n architecture perovskite solar cells with cuprous iodide as hole transport material

Inverted perovskite solar cells (p-i-n PSCs) have been fascinated due to rapid progress of performance in recent years. PEDOT:PSS is commonly used hole transport material (HTM) in p-i-n PSCs having hygroscopic and acidic nature that leads towards poor performance of device. Therefore, it is necessary to replace PEDOT:PSS with stable HTM. In this paper, theoretical study is carried out to investigate physical parameters that can affect the performance of p-i-n PSCs with copper iodide (CuI) as HTM. These parameters include the effect of doping density of electron transport material (ETM), absorber and HTM as well as defect density and thickness of absorber on the performance of p-i-n PSCs. Hole mobility and thickness of HTM are also investigated. It is found that performance of p-i-n PSCs is strongly dependent on defect density and thickness of absorber. Upon final optimization, device attains PCE of more than 21% which is encouraging.