Packaging Performance of GaAs/InGaAs/InGaP Collector-Up HBTs as Power Amplifiers

被引：0
|
作者：
Tseng, Hsien-Cheng [1 ,2 ]
Chu, Wen-Jinn [2 ]
机构：
[1] Kun Shan Univ, Nanotechnol R&D Ctr, Tainan 71003, Taiwan
[2] Kun Shan Univ, Dept Elect Engn, Tainan 71003, Taiwan
来源：
2012 4TH ASIA SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ASQED) | 2012年
关键词：
GaAs/InGaAs/InGaP; graded base; heterojunction bipolar transistor (HBT); thermal; HETEROJUNCTION BIPOLAR-TRANSISTORS; SAFE OPERATING AREA; BAND;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors (HBTs), with an effective thermal-dissipation packaging (TDP) configuration, have been developed. The TDP-implemented multi-finger collector-up HBT with a graded InGaAs base is demonstrated to achieve compelling high-speed and heat-removing performances. Extraordinarily, the TDP has a stronger influence on the p-n-p device than on the n-n-p device. The results show that the thermal resistance has been substantially decreased by 50%, and a power-added efficiency (PAE) more than 56% is obtained. Thermal performance for miniature power amplifiers in next-generation cellular phones can be greatly improved from our design.
引用
收藏
页码：302 / 305
页数：4
相关论文
共 50 条
  • [41] A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers
    Niwa, T
    Ishigaki, T
    Shimawaki, H
    Nashimoto, Y
    2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 711 - 714
  • [42] High performance InGaP/GaAs HBTs with AlGaAs/InGaP emitter passivated ledges for reliable power applications
    Chen, WL
    Kim, TS
    Chau, HF
    Henderson, T
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 361 - 364
  • [43] Investigation of thermal stability in multifinger GaInP/GaAs collector-up tunneling-collector HBTs with subtransistor via-hole structure
    Tanaka, Ken'ichi
    Mochizuki, Kazuhiro
    Takubo, Chisaki
    Matsumoto, Hidetoshi
    Tanoue, Tomonori
    Ohbu, Isao
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (08) : 1759 - 1767
  • [44] High performance InGaP/GaAs HBTs for mobile communications
    Achouche, M
    Spitzbart, T
    Kurpas, P
    Brunner, F
    Würfl, J
    Tränkle, G
    ELECTRONICS LETTERS, 2000, 36 (12) : 1073 - 1075
  • [45] Enhanced fT and linearity performance of InGaP/GaAs HBTs using a non-uniform doping collector
    Wang, Che-ming
    Hsin, Yue-ming
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (04) : 330 - 336
  • [46] SELF-ALIGNED ALGAAS/INGAAS/GAAS COLLECTOR-UP HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE APPLICATIONS
    CHANG, MF
    SHENG, NH
    ASBECK, PM
    SULLIVAN, GJ
    WANG, KC
    ANDERSON, RJ
    HIGGINS, JA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2600 - 2600
  • [47] Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs
    Horio, K
    Kurosawa, N
    ELECTRONICS LETTERS, 1998, 34 (14) : 1436 - 1437
  • [48] InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors
    Sato, Hiroya
    Vlcek, James C.
    Fonstad, Clifton G.
    Meskoob, B.
    Prasad, S.
    Electron device letters, 1990, 11 (10): : 457 - 459
  • [49] SUPPRESSION OF GA-ATOM DIFFUSION AT GE/GAAS HETEROJUNCTION AND ITS APPLICATION TO HIGH-GAIN COLLECTOR-UP GE/GAAS HBTS
    KAWANAKA, M
    KIMURA, T
    SONE, J
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 383 - 388
  • [50] The effect of source impedance on linearity in InGaP/GaAs power HBTs
    Yamada, H
    Ohara, S
    Iwai, T
    Yamaguchi, Y
    Imanishi, K
    Joshin, K
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 555 - 558
12345