Packaging Performance of GaAs/InGaAs/InGaP Collector-Up HBTs as Power Amplifiers

被引：0
|
作者：
Tseng, Hsien-Cheng [1 ,2 ]
Chu, Wen-Jinn [2 ]
机构：
[1] Kun Shan Univ, Nanotechnol R&D Ctr, Tainan 71003, Taiwan
[2] Kun Shan Univ, Dept Elect Engn, Tainan 71003, Taiwan
来源：
2012 4TH ASIA SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ASQED) | 2012年
关键词：
GaAs/InGaAs/InGaP; graded base; heterojunction bipolar transistor (HBT); thermal; HETEROJUNCTION BIPOLAR-TRANSISTORS; SAFE OPERATING AREA; BAND;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors (HBTs), with an effective thermal-dissipation packaging (TDP) configuration, have been developed. The TDP-implemented multi-finger collector-up HBT with a graded InGaAs base is demonstrated to achieve compelling high-speed and heat-removing performances. Extraordinarily, the TDP has a stronger influence on the p-n-p device than on the n-n-p device. The results show that the thermal resistance has been substantially decreased by 50%, and a power-added efficiency (PAE) more than 56% is obtained. Thermal performance for miniature power amplifiers in next-generation cellular phones can be greatly improved from our design.
引用
收藏
页码：302 / 305
页数：4
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