Packaging Performance of GaAs/InGaAs/InGaP Collector-Up HBTs as Power Amplifiers

被引：0

作者：

Tseng, Hsien-Cheng ^{[1
,2
]}

Chu, Wen-Jinn ^{[2
]}

机构：

[1] Kun Shan Univ, Nanotechnol R&D Ctr, Tainan 71003, Taiwan

[2] Kun Shan Univ, Dept Elect Engn, Tainan 71003, Taiwan

来源：

2012 4TH ASIA SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ASQED) | 2012年

关键词：

GaAs/InGaAs/InGaP; graded base; heterojunction bipolar transistor (HBT); thermal; HETEROJUNCTION BIPOLAR-TRANSISTORS; SAFE OPERATING AREA; BAND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors (HBTs), with an effective thermal-dissipation packaging (TDP) configuration, have been developed. The TDP-implemented multi-finger collector-up HBT with a graded InGaAs base is demonstrated to achieve compelling high-speed and heat-removing performances. Extraordinarily, the TDP has a stronger influence on the p-n-p device than on the n-n-p device. The results show that the thermal resistance has been substantially decreased by 50%, and a power-added efficiency (PAE) more than 56% is obtained. Thermal performance for miniature power amplifiers in next-generation cellular phones can be greatly improved from our design.

引用

页码：302 / 305

页数：4

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