Si/SiGe epitaxy: a ubiquitous process for advanced electronics

被引：12

作者：

Dutartre, D. ^{[1
]}

Loubet, N. ^{[1
]}

Brossard, F. ^{[1
]}

Vandelle, B. ^{[1
]}

Chevalier, P. ^{[1
]}

Chantre, A. ^{[1
]}

Monfray, S. ^{[1
]}

Fenouillet-Beranger, C. ^{[1
]}

Pouydebasque, A. ^{[1
]}

Skotnicki, T. ^{[1
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This contribution is focusing on low temperature epitaxy of SiGe alloys that are required in advanced devices. In a first part, we give a certain background on RTCVD and SiGe(C) materials. In a second step, we develop some specific applications important and fundamental in our technologies: selective epitaxy of SiGeC for bipolar base and Si/SiGe epitaxies for the fabrication of thin films CMOS. In each case, we present major improvements of the process capabilities or innovative structures. And finally, we propose the association of Si/SiGe epi and SiGe selective etch as an effective way to fabricate objects at the nano-scale.

引用

页码：689 / 692

页数：4

共 12 条

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[7]

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[8]

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[9]

MONFRAY S, 2007, IEDM

[10]

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