The effect of substrate temperatures on the structural, optical and electrical properties of N-Al codoped ZnO thin films

被引：9
|
作者：
Ismail, A. [1 ]
Abdullah, M. J. [1 ]
Qaeed, M. A. [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia
来源：
JOURNAL OF LUMINESCENCE | 2015年 / 164卷
关键词：
Doped zinc oxide; Optical properties; X-ray diffraction and electrical properties; FABRICATION;
D O I：
10.1016/j.jlumin.2015.03.017
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
N-Al codoped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. The films were deposited at different substrate temperatures ranging from 100 degrees C to 400 degrees C. The ZnO (002) peak showed the highest intensity at the substrate temperature of 400 degrees C. The prepared films showed good transmission of above 72% in the visible range and the calculated values of energy band gaps were in the range (3.42 +/- 0.1-3.54 +/- 0.1 eV). Raman Peaks at 273.58 cm(-1) and 579.49 cm(-1) corresponding to ZnO:N and ZnO:AlN respectively were also observed. The Hall measurements showed that the films deposited at RT and 400 degrees C exhibit p-type conduction with hole concentrations of 1.52 x 10(+19) cm(-3) and 63 x 10(+17) cm(-3) respectively. The corresponding mobilities were 0.866 cm(2) V-1 s(-1) and 10.5 cm(2) V-1 s(-1) respectively. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：69 / 75
页数：7
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