Enhanced Bias Stability of Solution-Processed Zinc-Tin-Oxide Thin Film Transistors Using Self-Assembled Monolayer as a Selective Channel Passivation

被引：3

作者：

Heo, Jae-Sang ^{[1
]}

Park, Sung-Kyu ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 10期

关键词：

ZTO TFTs; Self-Assembled Monolayer (SAM); Passivation; Bias-Stability;

D O I：

10.1166/jnn.2013.7799

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The enhanced positive bias stability of amorphous zinc-tin-oxide thin-film transistors (a-ZTO TFTs) were obtained by applying self-assembled monolayer (SAM) as a selective passivation layer on the metal-oxide back channel area. The a-ZTO TFTs with passivation layers such as poly(methyl methacylate) (PMMA), SAM, and SAM/PMMA were fabricated by simple solution methods. After deposition of the passivation layers, the electrical characteristics of a-ZTO TFTs have not been changed and the threshold voltage shift (Delta V-th) under gate-bias stress for around 10(4) seconds was improved. The Delta V-th of the devices with PMMA, SAM, and SAM/PMMA dual layer were 3.79 V, 3.2 V, and 2.17 V, respectively.

引用

页码：7056 / 7058

页数：3