Composition, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

被引：21
作者：
Annadurai, A. [2 ]
Nandakumar, A. K. [2 ]
Jayakumar, S. [2 ]
Kannan, M. D. [2 ]
Raja, M. Manivel [1 ]
Bysak, S. [1 ]
Gopalan, R. [1 ]
Chandrasekaran, V. [1 ]
机构：
[1] Def Met Res Lab, Hyderabad 500058, Andhra Pradesh, India
[2] PSG Coll Technol, Dept Phys, Thin Film Ctr, Coimbatore 641004, Tamil Nadu, India
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2009年 / 321卷 / 06期
关键词：
Ferromagnetic shape memory; Ni-Mn-Ga thin film; Sputtering and magnetization; NI2MNGA; CRYSTALLIZATION; TRANSFORMATION; MECHANISM; GROWTH;
D O I：
10.1016/j.jmmm.2008.10.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(100) and glass at a constant sputtering power of 36W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L2(1) austenitic phase. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：630 / 634
页数：5
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