Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

被引：6

作者：

Xiong Jian-Yong ^{[1
]}

Zhao Fang ^{[1
]}

Fan Guang-Han ^{[1
]}

Xu Yi-Qin ^{[2
]}

Liu Xiao-Ping ^{[1
]}

Song Jing-Jing ^{[1
]}

Ding Bin-Bin ^{[1
]}

Zhang Tao ^{[1
]}

Zheng Shu-Wen ^{[1
]}

机构：

[1] S China Normal Univ, Lab Nanophoton Funct Mat & Devices, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

[2] Guangdong Gen Res Inst Ind Technol, Guangzhou 510650, Guangdong, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 11期

基金：

中国国家自然科学基金;

关键词：

light-emitting diodes; p-AlGaN/GaN superlattice; last quantum barrier; efficiency droop; DROOP; LEDS;

D O I：

10.1088/1674-1056/22/11/118504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this study, the efficiency droop of an InGaN light-emitting diode (LED) is reduced significantly by using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device (APSYS).

引用

页数：5

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