Morphology change of galvanically displaced one-dimensional tellurium nanostructures via controlling the microstructure of sacrificial Ni thin films

被引：12

作者：

Elazem, Diana ^{[1
]}

Jung, Hyunsung ^{[2
]}

Wu, Tingjun ^{[1
]}

Lim, Jae-Hong ^{[3
]}

Lee, Kyu-Hwan ^{[3
]}

Myung, Nosang V. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Chem & Environm Engn, Riverside, CA 92521 USA

[2] Korea Inst Ceram Engn & Technol, Adv Mat Convergence Div, Seoul 153801, South Korea

[3] Korea Inst Mat Sci, Electrochem Dept, Chang Won 641831, South Korea

来源：

ELECTROCHIMICA ACTA | 2013年 / 106卷

关键词：

Tellurium; Nanowire; Galvanic displacement reaction; Nickel; Electrodeposition; GROWTH-MECHANISM; NANOWIRES; PERFORMANCE; NANORODS; BISMUTH;

D O I：

10.1016/j.electacta.2013.05.117

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

One-dimensional Tellurium (Te) nanostructures with controlled dimensions and morphologies have been synthesized by the galvanic displacement reaction (GDR) of electrodeposited nickel (Ni) thin films. The effects of sacrificial Ni microstructure and HTeO2+ ion concentration on the resulting Te nanostructures were systematically investigated. The preferred crystal orientation of sacrificial Ni thin films was varied to synthesize Te nanostructures with various levels of distinctiveness. By adjusting the concentration of HTeO2+ ions in the galvanic displacement electrolyte, well-aligned one-dimensional (1-D) Te nano-structures such as conical and hexagonal pillars were prepared where the diameter ranged from similar to 70 to similar to 900 nm and the length ranged from 1 to 3.6 mu m. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：447 / 452

页数：6

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