Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors

被引：33

作者：

Zhang, Jie ^{[1
,2
,3
]}

Li, Xifeng ^{[4
]}

Lu, Jianguo ^{[1
,4
]}

Zhou, Nanjia ^{[2
,3
]}

Guo, Peijun ^{[2
,3
]}

Lu, Bin ^{[1
]}

Pan, Xinhua ^{[1
]}

Chen, Linxiang ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[3] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

[4] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China

来源：

RSC ADVANCES | 2014年 / 4卷 / 07期

基金：

中国国家自然科学基金;

关键词：

TEMPERATURE; STABILITY; CO;

D O I：

10.1039/c3ra44513e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Stability of amorphous InAlZnO thin-film transistors was investigated under vacuum conditions and an oxygen atmosphere with different rates of relative humidity. The mechanism of water assisted oxygen absorption on the back channel is proposed to explain the phenomenon that wet oxygen leads to a larger positive threshold voltage (V-th) shift than dry oxygen.

引用

收藏

页码：3145 / 3148

页数：4

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共 18 条

[1] EFFECTS OF CO, WATER-VAPOR AND SURFACE-TEMPERATURE ON CONDUCTIVITY OF A SNO2 GAS SENSOR [J].

BOYLE, JF ;

JONES, KA .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) :717-733

[2] Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors [J].

Conley, John F., Jr. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (04) :460-475

[3] Water as Origin of Hysteresis in Zinc Tin Oxide Thin-Film Transistors [J].

Fakhri, M. ;

Johann, H. ;

Goerrn, P. ;

Riedl, T. .

ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (09) :4453-4456

[4] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[5] High performance and high stability low temperature aqueous solution-derived Li-Zr co-doped ZnO thin film transistors [J].

Jung, Yangho ;

Yang, Wooseok ;

Koo, Chang Young ;

Song, Keunkyu ;

Moon, Jooho .

JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (12) :5390-5397

[6] Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress [J].

Kim, Bosul ;

Chong, Eugene ;

Kim, Do Hyung ;

Jeon, Yong Woo ;

Kim, Dae Hwan ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2011, 99 (06)

[7] Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].

Lee, Jeong-Min ;

Cho, In-Tak ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

[8] The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors [J].

Lee, Kwang-Hee ;

Jung, Ji Sim ;

Son, Kyoung Seok ;

Park, Joon Seok ;

Kim, Tae Sang ;

Choi, Rino ;

Jeong, Jae Kyeong ;

Kwon, Jang-Yeon ;

Koo, Bonwon ;

Lee, Sangyun .

APPLIED PHYSICS LETTERS, 2009, 95 (23)

[9] Competitive surface effects of oxygen and water on UV photoresponse of ZnO nanowires [J].

Li, Yanbo ;

Della Valle, Florent ;

Simonnet, Mathieu ;

Yamada, Ichiro ;

Delaunay, Jean-Jacques .

APPLIED PHYSICS LETTERS, 2009, 94 (02)

[10] Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress [J].

Liu, Po-Tsun ;

Chou, Yi-Teh ;

Teng, Li-Feng .

APPLIED PHYSICS LETTERS, 2009, 95 (23)