High efficiency triple junction thin film silicon solar cells with optimized electrical structure

被引：20

作者：

Liu, Bofei ^{[1
]}

Bai, Lisha ^{[1
]}

Chen, Ze ^{[1
]}

Zhang, Xiaodan ^{[1
]}

Zhang, Dekun ^{[1
]}

Ni, Jian ^{[1
]}

Huang, Qian ^{[1
]}

Wei, Changchun ^{[1
]}

Sun, Jian ^{[1
]}

Chen, Xinliang ^{[1
]}

Ren, Huizhi ^{[1
]}

Hou, Guofu ^{[1
]}

Wang, Guangcai ^{[1
]}

Zhao, Ying ^{[1
]}

机构：

[1] Nankai Univ, Inst Photo Elect Thin Film Devices & Technol, Key Lab Photoelect Thin Film Devices Technol, Tianjin 300071, Peoples R China

来源：

PROGRESS IN PHOTOVOLTAICS | 2015年 / 23卷 / 10期

关键词：

tunnel recombination junction; multi-junction solar cell; p-i-n; triple-junction solar cell; open circuit voltage loss; a-Si:H/a-SiGe:H/mu c-Si:H; AMORPHOUS-SILICON; MICROCRYSTALLINE SILICON; RECOMBINATION JUNCTION; TUNNEL-JUNCTIONS; P-LAYERS; GERMANIUM; GAP; ABSORPTION; PROGRESS; MODEL;

D O I：

10.1002/pip.2564

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on improving the performance of pin-type a-Si:H/a-SiGe:H/mu c-Si:H triple-junction solar cells and corresponding single-junction solar cells in this paper. Based on wet-etching sputtered aluminum-doped zinc oxide (ZnO:Al) substrates with optimized surface morphologies and photo-electrical material properties, after adjusting individual single-junction solar cells utilized in triple-junction solar cells with various optimization techniques, we pay close attention to the optimization of tunnel recombination junctions (TRJs). By means of the optimization of individual a-Si:H/a-SiGe:H and a-SiGe:H/mu c-Si:H double-junction solar cells, we compensated for the open circuit voltage (V-oc) loss at the a-Si:H/a-SiGe:H TRJ by adopting a p-type mu c-Si:H layer with a low activation energy. By combining the optimized single-junction solar cells and top/middle, middle/bottom TRJs with little electrical losses, an initial efficiency of 15.06% was achieved for pin-ype a-Si:H/a-SiGe:H/mu c-Si:H triple-junction solar cells. Copyright (C) 2014 John Wiley & Sons, Ltd.

引用

页码：1313 / 1322

页数：10

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