Characterizations of GaInNAs/GaAs quantum wells

被引：0

作者：

Bielak, Katarzyna ^{[1
]}

Pucicki, Damian ^{[1
]}

Sciana, Beata ^{[1
]}

Radziewicz, Damian ^{[1
]}

Dawidowski, Wojciech ^{[1
]}

Badura, Mikolaj ^{[1
]}

Kudrawiec, Robert ^{[2
]}

Serafinczuk, Jaroslaw ^{[1
]}

Tlaczala, Marek ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland

[2] Wroclaw Univ Technol, Inst Phys, PL-50372 Wroclaw, Poland

来源：

ELECTRON TECHNOLOGY CONFERENCE 2013 | 2013年 / 8902卷

关键词：

GaInNAs; characterization; HRXRD; CER;

D O I：

10.1117/12.2031298

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Heterostructures of GaInNAs/GaAs multiple quantum wells were characterized by high resolution x-ray diffraction. Complexity and stress compensating effect of such quaternary alloys cause many characterization problems. One of the most important issue is determination of composition of the material, which cannot be performed utilizing only one characterization method. That is why structural analysis had to be related with optical measurements which give different information correlated with composition. A comparison of theoretical calculations of energy band gap with energy of transitions in GaInNAs QWs from photoluminescence or contactless electro-reflectance measurements supplement the results of HRXRD and gives complete information about the structure required as a feedback to develop technology of heterostructures epitaxial growth.

引用

页数：6

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