Monolithically integrated optical beat sources toward a single-chip broadband terahertz emitter

被引：24

作者：

Kim, N. ^{[1
]}

Ryu, H-C ^{[1
]}

Lee, D. ^{[2
]}

Han, S-P ^{[1
]}

Ko, H. ^{[1
]}

Moon, K. ^{[1
]}

Park, J-W ^{[1
]}

Jeon, M. Y. ^{[3
]}

Park, K. H. ^{[1
]}

机构：

[1] ETRI, THz Photon Creat Res Ctr, Taejon 305700, South Korea

[2] ETRI, Opt Internet Devices Res Team, Taejon 305700, South Korea

[3] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

来源：

LASER PHYSICS LETTERS | 2013年 / 10卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

DUAL-MODE LASER; SEMICONDUCTOR-LASER; THZ RADIATION; DIODE-LASER; GENERATION; SPECTROSCOPY; REFLECTOR; OUTPUT;

D O I：

10.1088/1612-2011/10/8/085805

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have developed a 1.3 mu m phase-shifted dual-mode laser diode (pDML) for a tunable continuous-wave terahertz (CW THz) emitter. The mode beat frequency of the pDML is continuously tuned from 250 to 1480 GHz by introducing monolithically integrated micro-heaters and multiple sections to an all-active structure. The pDML shows a narrow spectral linewidth and a strong four-wave mixing signal throughout the entire tuning range. By combining InGaAs based photomixers, we have successfully generated continuous-wave THz radiation, and confirmed the precise beat frequency settings and fast sweeping of this. This pDML operating at 1.3 mu m shows excellent performance in terms of THz conversion efficiency, tuning range and thermal stability.

引用

页数：6

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