Giant generic topological Hall resistivity of MnSi under pressure

被引：99

作者：

Ritz, R. ^{[1
]}

Halder, M. ^{[1
]}

Franz, C. ^{[1
]}

Bauer, A. ^{[1
]}

Wagner, M. ^{[1
]}

Bamler, R. ^{[2
]}

Rosch, A. ^{[2
]}

Pfleiderer, C. ^{[1
]}

机构：

[1] Tech Univ Munich, Phys Dept E21, D-85748 Garching, Germany

[2] Univ Cologne, Inst Theoret Phys, D-50937 Cologne, Germany

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 13期

关键词：

QUANTUM PHASE-TRANSITION; BERRY PHASE; ITINERANT FERROMAGNET; SPIN; MAGNETIZATION; CHIRALITY; MAGNETORESISTANCE; DEPENDENCE;

D O I：

10.1103/PhysRevB.87.134424

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report detailed low-temperature magnetotransport and magnetization measurements in MnSi under pressures up to similar to 12 kbar. Tracking the role of sample quality, pressure transmitter, and field and temperature history allows us to link the emergence of a giant topological Hall resistivity similar to 50 n Omega cm to the skyrmion lattice phase at ambient pressure. We show that the remarkably large size of the topological Hall resistivity in the zero-temperature limit must be generic. We discuss various mechanisms which can lead to the much smaller signal at elevated temperatures observed at ambient pressure.

引用

页数：17

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