Bending Effects in a Flexible Dual Gated Graphene FET: a Verilog-A Model Implementation

This paper presents the Verilog-A implementation of charge control based model of dual gated graphene field effect transistor (GFET) and initial results towards bending induced changes in their electrical response. The ambipolar region of the device has been described using the saturation and displacement current models. The output characteristics derived from Verilog A simulation is in good agreement with the reported experimental results. The model has been extended to study the behaviour of a bendable GFET and the simulation indicates negligible change in the electrical properties in the test range of bending.