Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

被引：17

作者：

Fang, Z. ^{[1
]}

Yu, H. Y. ^{[2
]}

Fan, W. J. ^{[3
]}

Ghibaudo, G. ^{[4
]}

Buckley, J. ^{[5
]}

DeSalvo, B. ^{[5
]}

Li, X. ^{[1
]}

Wang, X. P. ^{[1
]}

Lo, G. Q. ^{[1
]}

Kwong, D. L. ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

[2] South Univ Sci & Technol China, Shenzhen 518055, Peoples R China

[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[4] MINATEC, Inst Microelect Electromagnetisme & Photon, CNRS, F-38016 Grenoble, France

[5] MINATEC, Commiss Energie Atom, Lab Elect Technol Informat, F-38054 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 03期

关键词：

Current conduction model; low-frequency noise (LFN); resistive switching;

D O I：

10.1109/TED.2013.2240457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A conduction model consisting of two parallel resistances from a highly conductive filament region and a uniform leakage oxide region is proposed in this brief to represent the current conduction in the filament-type switching resistive random access memory cell. Low-frequency noise analysis of current fluctuation at different resistance states has been employed to verify its efficiency. It is found that, in the low-resistance regime, filament resistance dominates current conduction and noise varies as a power law of resistance, whereas in the high-resistance regime, uniform oxide leakage is the major source of conduction, giving rise to a nearly constant noise level.

引用

页码：1272 / 1275

页数：4

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